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PTF 10161 165 Watts, 869-894 MHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 16.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability
* * * *
Typical Output Power & Efficiency vs. Input Power
180 60 Efficiency
Output Power (Watts)
Efficiency (%)
140
45
100
30
1234
1016 5600 1 5
5
VDD = 28.0 V
60 Output Power 20 0 1 2 3 4 5 6 7 8 0
IDQ = 1.5 A Total f = 880 MHz
15
Input Power (Watts)
Package 20250
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.5 A Total, f = 880 MHz) Drain Efficiency (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 893.9, 894 MHz--all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
15.0 165 45 --
Typ
16.0 180 50 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10161
Electrical Characteristics (per side) (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- 4.3 2.5
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C)
(1) per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 20 200 500 2.85 -40 to +150 0.35
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
Typical POUT (at P-1dB), Gain & Efficiency vs. Frequency
18 Output Power (W) 16 Gain (dB) 175 225
Broadband Test Fixture Performance
16 Gain 60
Output Power & Efficiency
14
Efficiency (%)
Gain (dB)
40
Gain
14
125
12
VDD = 28 V IDQ = 1.5 A Total POUT = 165 W
Return Loss (dB)
30 -20 5 -10 -15 10 -20 -25 0 895
12
Efficiency (%)
IDQ = 1.5 A Total
75
10
10 865
870
875
880
885
890
25 895
8 865
870
875
880
885
890
Frequency (MHz)
Frequency (MHz)
2
Return Loss
VDD = 28 V
Efficiency
50
e
Typical Performance (cont.)
Output Power vs. Supply Voltage
200 -10
PTF 10161
Intermodulation Distortion vs. Output Power
VDD = 28 V
-20
Output Power (Watts)
180 160
ICQ = 1.5 A Total f1 = 880.0 MHz f2 = 880.1 MHz
3rd order
IMD (dBc)
30
140 120 100 80 60 40 18 20 22 24 26 28
-30 -40 -50 -60 30
IDQ = 1.5 A Total f = 894 MHz
50
70
90
110
130
150
170
Supply Voltage (Volts)
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage (per side) *
600 500 95 85
Gate-Source Voltage vs. Case Temperature
1.03 1.02 Voltage normalized to 1.0 V Series show current (A)
Cds & Cgs (pF) .
Cgs
400 300 200 100 0 0 10 20 30 40
75
Crss (pF)
65
Bias Voltage (V)
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 5 30 55 80 105 1.72 5 8.32 11.6 14.84 18.12
Cds
VGS = 0 V f = 1 MHz
55 45 35 25
Crss
15 5
Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures.
Case Temperature (C)
3
PTF 10161
Impedance Data
OR
e
--- >
D
- WAVELENGTHS
TOW ARD LOAD G TH S
Frequency
MHz 860 870 880 890 900 R
Z Source W
jX 1.6 0.8 0.3 0.1 -0.2 R 2.3 1.9 1.8 1.7 1.6
Z Load W
jX -1.1 -1.7 -2.1 -1.8 -1.5 1.60 1.70 1.90 1.95 1.80
0.0
900 MHz 860 MHz
900 MHz
Z Load
0.1
4
W
EN AVE L
0.1
0.1
G G
S
TO W A
RD G
Z Source
D
Z Load
ENE
RAT
Z Source
860 MHz
0.2
VDD = 28 V, IDQ = 1.5 A Total, POUT = 165 W
Z0 = 50 W
e
Test Circuit
PTF 10161
Schematic for f = 894 MHz D1, D2 PTF 10161 0.255 l 894 MHz Microstrip 52.3 W 0.121 l 894 MHz Microstrip 22.1 W 0.097 l 894 MHz Microstrip 37.3 W 0.482 l 894 MHz Microstrip 27.8 W 0.016 l 894 MHz Microstrip 27.8 W 0.052 l 894 MHz Microstrip 27.8 W 0.013 l 894 MHz Microstrip 22.2 W 0.065 l 894 MHz Microstrip 22.2 W 0.048 l 894 MHz Microstrip 13.1W 0.024 l 894 MHz Microstrip 10.4 W 0.017 l 894 MHz Microstrip 10.3 W 0.105 l 894 MHz Microstrip 8.4 W 0.080 l 894 MHz Microstrip 8.4 W 0.010 l 894 MHz Microstrip 8.4 W 0.120 l 894 MHz Microstrip 37.3 W 0.093 l 894 MHz Microstrip 28.9 W .031" Thick, er = 4.0, 2 oz. Copper, G200, Cirexx C1, C8, C12, C19 Capicitor, Ceramic Chip, .01 F Digi-Key PCC103BNCT-ND C2, C9, C14, C15, C21, C22 Capicitor, 10 f, 35V, Tantalum TE series SMD Digi-Key PCS6 106TR-ND C3, C10, C13, C17, C18, C20 Capicitor, 33 pF 100B 330 C4, C7 Capicitor, 15 pF 100B 150 C6 Capicitor, 11 pF 100B 110 C5 Capicitor, 1.7 pF 100B 1R7 C11 Capicitor, 3.0 pF 100B 3R0 C16 Capicitor, 5.1 pF 100B 5R0 J1, J2 Connector, SMA, Female, Panel Mount 1301-RPM 513 412/53 L1, L2 4 Turns, 22 AWG, .120" I.D. R1, R2, R3, R4 Chip Resistor 1/8W-5% SMD, 510 ohm 1206 Digi-Key PXX*KECT-ND R5, R6 Resistor, 220 ohm Digi-Key 220QBK-ND
l6, l23
l1, l28 l2 l3 l4, l25 l5, l24
l7, l8 l9, l10 l11, l12 l13, l14
l15, l16 l17, l18 l19, l 20 l21, l22 l 26 l 27 Circuit Board
5
PTF 10161
Test Circuit
(cont.)
e
e
10161
Assembly Diagram (not to scale)
Artwork (not to scale)
6
e
Case Outline Specifications Package 20250
PTF 10161
1
1 2
3
3
Primary dimensions are inches; alternate dimensions are mm.
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10161 Uen Rev. A 01-16-01
7

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